SK Hynix Develops 1Ynm (Second Gen 10nm) 8Gb DDR4 DRAM

PRESS RELEASE

SK Hynix has announced the development of its 1Ynm 8Gb DDR4 DRAM memory. The chip delivers 20% improvement in productivity compared to its previous-generation 1Xnm counterpart and also more than 15% improvement in power consumption.

The new SK Hynix 1Ynm 8Gb DDR4 DRAM supports a data transfer rate of up to 3,200Mbps, which the company claims is the fastest data processing speed in DDR4 interface. SK Hynix noted it adopted a ‘4-Phase Clocking’ scheme, which doubles the clock signal to boost data transfer speed and stability.

SK Hynix also introduced its in-house developed “Sense Amp. Control” technology to reduce power consumption and data errors. With this technology, the company was able to enhance the performance of the sense amplifier. SK Hynix improved the transistor structure to lower the possibility of data errors, a challenge that accompanies technology shrink. The Company also added a low-power power supply to the circuit to prevent unnecessary power consumption.

“This 1Ynm 8Gb DDR4 DRAM has optimum performance and density for our clients,” said SK Hynix VP Sean Kim, head of DRAM marketing. “SK Hynix plans to start shipping from the first quarter of the next year to actively respond to market demand.”

SK Hynix plans to offer its 1Ynm technology process for servers and PCs, and later to other various applications such as mobile devices.

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